Low dielectric constant materials for multilevel interconnect applications
Low dielectric constant (low-k) constitutive dielectrics for interconnects have been fabricated by both plasma deposition and solution synthesis from -organosilicon precursors. Fluorinated silicon oxide (FSG) was deposited from an inductively coupled high density plasma. The mechanisms of dielectric...
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| Format: | Research Report |
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2008
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| Online Access: | http://hdl.handle.net/10356/2897 |