Development of electron beam lithography process for the design and fabrication of sub-micron GaAs-based RF devices

This report presents the device fabrication and characterisation of the InxGa1-xP/In0.20Ga0.80As HEMT.

Bibliographic Details
Main Author:	Yoon, Soon Fatt.
Other Authors:	School of Electrical and Electronic Engineering
Format:	Research Report
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Electronic packaging
Online Access:	http://hdl.handle.net/10356/3038

Internet

http://hdl.handle.net/10356/3038