Design and fabrication of heterojunction bipolar transistors (HBT)

This thesis presents the development of an AlGaAs/GaAs-based heterojunction bipolar transistor technology for microwave and power applications. The HBTs were fabricated on MOCVD grown epitaxial layers which consist of an InyGai.yAs emitter contact layer, a GaAs emitter cap layer, an aluminum composi...

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Bibliographic Details
Main Author:	Pan, Yang
Other Authors:	Ng, Geok Ing
Format:	Thesis
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Online Access:	http://hdl.handle.net/10356/3113

Internet

http://hdl.handle.net/10356/3113

Design and fabrication of heterojunction bipolar transistors (HBT)

Internet

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