Development of NTU 1.2(m)m CMOS process technology
This project aims to develop and optimize the baseline 1.2um Twin-Well CMOS technology which will be extended to 1.2um SiGe BiCMOS technology in the future Processes such as Punch-through implant, Sidewall spacer and Halo Implant were studied to control the short channel effect.
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| Format: | Thesis |
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2008
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| Online Access: | http://hdl.handle.net/10356/3233 |