Characterisation of Be-doped GaInAs/AlGaAs multiple quantum well structures and GaInAsP layers grown by solid source molecular beam epitaxy
Electrical, optical and structural properties of the Be-doped GalnAs/AlGaAs strained multiple quantum-well structures (MQWs) with different doping densities in the GalnAs wells, were systematically investigated. Extensive optical characterisation revealed that higher Be-doping densities in the well...
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| Format: | Thesis |
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2008
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| Online Access: | http://hdl.handle.net/10356/3246 |