Electromigration reliability of copper interconnect in submicron microelectronics application

In this dissertation, the effects of temperature and interconnect properties on copper metallization electromigration are discussed. Accelerated Life Testing is used to obtain performance data on devices at a quicker rate.

Bibliographic Details
Main Author: Ang, Kian Ann
Other Authors: Prasad, Krishnamachar
Format: Thesis
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/3326