Design of semiconductor high-power laser diodes

High power semiconductor laser diode structure for lasing at 808nm wavelength has been designed. Its performance such as threshold current, slope efficiency, CW power output has been simulated to optimize the device structure.

Bibliographic Details
Main Author: Tan, Guan Seng.
Other Authors: Tang, Xiaohong
Format: Thesis
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/3356