Design and fabrication of III-V RF devices for MMIC applications

Submicron AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) grown on GaAs substrate by MBE (Molecular Beam Epitaxy) has been designed, fabricated and characterized in this work.

Detalhes bibliográficos
Autor principal: Ang, Kian Siong
Outros Autores: Ng, Geok Ing
Formato: Tese
Publicado em: 2008
Assuntos:
Acesso em linha:http://hdl.handle.net/10356/3437