Dielectric/metal diffusion barrier in Cu/porous ultra low-k interconnect technology
As Cu damascene process and low dielectric constant material (low-k) are introduced into back-end of line (BEOL) semiconductor manufacturing, a robust barrier system is highly essential for integrated circuit (IC) performance and reliability improvements. In this work, the application of dielectric...
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| Format: | Thesis |
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2008
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| Online Access: | https://hdl.handle.net/10356/3490 |