High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics
The constant increase in integrated circuit densities predicted by Moore’s law requires the continuous reduction of the CMOS device dimensions such as the gate length, gate oxide thickness, etc. Silicon dioxide (SiO2) has been used as the gate oxide and been aggressively scaled for more than 30 year...
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| Formato: | Tese |
| Publicado em: |
2008
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| Acesso em linha: | https://hdl.handle.net/10356/3502 |