High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics
The constant increase in integrated circuit densities predicted by Moore’s law requires the continuous reduction of the CMOS device dimensions such as the gate length, gate oxide thickness, etc. Silicon dioxide (SiO2) has been used as the gate oxide and been aggressively scaled for more than 30 year...
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| Format: | Thesis |
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2008
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| Online Access: | https://hdl.handle.net/10356/3502 |
| _version_ | 1811690661752078336 |
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| author | Lu, Yuekang |
| author2 | Zhu Weiguang |
| author_facet | Zhu Weiguang Lu, Yuekang |
| author_sort | Lu, Yuekang |
| collection | NTU |
| description | The constant increase in integrated circuit densities predicted by Moore’s law requires the continuous reduction of the CMOS device dimensions such as the gate length, gate oxide thickness, etc. Silicon dioxide (SiO2) has been used as the gate oxide and been aggressively scaled for more than 30 years. Nowadays in the state-of-the-art MOSFET, the gate oxide thickness is reduced to 1.2 nm. However, with the use of such thin SiO2,direct tunneling dominates the dielectric conduction which results in high leakage current and unacceptable power dissipations. In order to maintain the performance improvement trends, there are growing interests in the replacement of SiO2 with a high-k dielectric material. |
| first_indexed | 2024-10-01T06:07:33Z |
| format | Thesis |
| id | ntu-10356/3502 |
| institution | Nanyang Technological University |
| last_indexed | 2024-10-01T06:07:33Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/35022023-07-04T17:34:04Z High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics Lu, Yuekang Zhu Weiguang School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits The constant increase in integrated circuit densities predicted by Moore’s law requires the continuous reduction of the CMOS device dimensions such as the gate length, gate oxide thickness, etc. Silicon dioxide (SiO2) has been used as the gate oxide and been aggressively scaled for more than 30 years. Nowadays in the state-of-the-art MOSFET, the gate oxide thickness is reduced to 1.2 nm. However, with the use of such thin SiO2,direct tunneling dominates the dielectric conduction which results in high leakage current and unacceptable power dissipations. In order to maintain the performance improvement trends, there are growing interests in the replacement of SiO2 with a high-k dielectric material. DOCTOR OF PHILOSOPHY (EEE) 2008-09-17T09:31:07Z 2008-09-17T09:31:07Z 2006 2006 Thesis Lu, Y. (2006). High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/3502 10.32657/10356/3502 Nanyang Technological University application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits Lu, Yuekang High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics |
| title | High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics |
| title_full | High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics |
| title_fullStr | High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics |
| title_full_unstemmed | High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics |
| title_short | High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics |
| title_sort | high k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits |
| url | https://hdl.handle.net/10356/3502 |
| work_keys_str_mv | AT luyuekang highkhafniumoxidebasedthinfilmsusinglasermolecularbeamepitaxyforgatedielectrics |