Characterization and modeling of negative bias temperature instability in P-MOSFETs
This thesis is concerned with the study of negative bias temperature instability (NBTI) in p-MOSFETs. A simple characterization method based on the single-point measurement of the saturated drain current is first proposed to minimize the unwanted recovery effect during the NBTI measurement. A study...
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| Format: | Thesis |
| Language: | English |
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2010
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| Online Access: | https://hdl.handle.net/10356/35246 |