Characterization and modeling of negative bias temperature instability in P-MOSFETs
This thesis is concerned with the study of negative bias temperature instability (NBTI) in p-MOSFETs. A simple characterization method based on the single-point measurement of the saturated drain current is first proposed to minimize the unwanted recovery effect during the NBTI measurement. A study...
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| Format: | Thesis |
| Language: | English |
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2010
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| Online Access: | https://hdl.handle.net/10356/35246 |
| _version_ | 1811695295576145920 |
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| author | Yang, Jianbo |
| author2 | Chen Tupei |
| author_facet | Chen Tupei Yang, Jianbo |
| author_sort | Yang, Jianbo |
| collection | NTU |
| description | This thesis is concerned with the study of negative bias temperature instability (NBTI) in p-MOSFETs. A simple characterization method based on the single-point measurement of the saturated drain current is first proposed to minimize the unwanted recovery effect during the NBTI measurement. A study on the NBTI recovery is also conducted as it may help predict the actual device lifetime with a better accuracy and may improve the understanding of the NBTI mechanism also. An analytical reaction-diffusion (R-D) model within the framework of the standard R-D model is proposed to describe the NBTI process in a wide time scale covering the three regimes of reaction, transition and diffusion. An analytical reaction-dispersive-diffusion (RDD) model is further developed by incorporating the dispersive transport nature of the diffusion into the R-D model. The RDD model can well explain the nitrogen-enhanced NBTI effect. It can also well describe the NBTI degradation including its dependence on the stress time, stress temperature and interfacial nitrogen concentration and its power-law behaviors as well. This in turn gives an insight into the roles of the hydrogen dispersive diffusion in the NBTI process. First-principles calculations are also carried out to examine the effects of nitrogen on NBTI in terms of the influence of nitrogen on the NBTI reaction energy, electro-negativity and atomic charge distribution. Impacts of various advanced process technologies, e.g., stress proximity technique, 45°-rotated silicon substrate, laser spike annealing, on the NBTI are investigated. NBTI degradation behaviors of 65/45nm high-performance p-MOSFETs with ultrathin gate oxide, including the impact of gate oxide process and the geometry dependence are studied. |
| first_indexed | 2024-10-01T07:21:12Z |
| format | Thesis |
| id | ntu-10356/35246 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:21:12Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | ntu-10356/352462023-07-04T17:32:22Z Characterization and modeling of negative bias temperature instability in P-MOSFETs Yang, Jianbo Chen Tupei School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors This thesis is concerned with the study of negative bias temperature instability (NBTI) in p-MOSFETs. A simple characterization method based on the single-point measurement of the saturated drain current is first proposed to minimize the unwanted recovery effect during the NBTI measurement. A study on the NBTI recovery is also conducted as it may help predict the actual device lifetime with a better accuracy and may improve the understanding of the NBTI mechanism also. An analytical reaction-diffusion (R-D) model within the framework of the standard R-D model is proposed to describe the NBTI process in a wide time scale covering the three regimes of reaction, transition and diffusion. An analytical reaction-dispersive-diffusion (RDD) model is further developed by incorporating the dispersive transport nature of the diffusion into the R-D model. The RDD model can well explain the nitrogen-enhanced NBTI effect. It can also well describe the NBTI degradation including its dependence on the stress time, stress temperature and interfacial nitrogen concentration and its power-law behaviors as well. This in turn gives an insight into the roles of the hydrogen dispersive diffusion in the NBTI process. First-principles calculations are also carried out to examine the effects of nitrogen on NBTI in terms of the influence of nitrogen on the NBTI reaction energy, electro-negativity and atomic charge distribution. Impacts of various advanced process technologies, e.g., stress proximity technique, 45°-rotated silicon substrate, laser spike annealing, on the NBTI are investigated. NBTI degradation behaviors of 65/45nm high-performance p-MOSFETs with ultrathin gate oxide, including the impact of gate oxide process and the geometry dependence are studied. DOCTOR OF PHILOSOPHY (EEE) 2010-04-12T08:20:03Z 2010-04-12T08:20:03Z 2010 2010 Thesis Yang, J. (2010). Characterization and modeling of negative bias temperature instability in p-MOSFETs. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/35246 10.32657/10356/35246 en 250 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Yang, Jianbo Characterization and modeling of negative bias temperature instability in P-MOSFETs |
| title | Characterization and modeling of negative bias temperature instability in P-MOSFETs |
| title_full | Characterization and modeling of negative bias temperature instability in P-MOSFETs |
| title_fullStr | Characterization and modeling of negative bias temperature instability in P-MOSFETs |
| title_full_unstemmed | Characterization and modeling of negative bias temperature instability in P-MOSFETs |
| title_short | Characterization and modeling of negative bias temperature instability in P-MOSFETs |
| title_sort | characterization and modeling of negative bias temperature instability in p mosfets |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors |
| url | https://hdl.handle.net/10356/35246 |
| work_keys_str_mv | AT yangjianbo characterizationandmodelingofnegativebiastemperatureinstabilityinpmosfets |