Fabrication and characterization of AlGaAs/GaAs pseudomorphic high electron mobility transistors for power applications
A robust process technology using optical and electron beam lithography has been developed for 0.25 µm gate length AlGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs). These devices, for power applications at microwave frequencies, demonstrated a high gate-drain breakdown voltage a...
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| Format: | Thesis |
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2008
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| Online Access: | https://hdl.handle.net/10356/3532 |