Unified AC charge and DC current modeling for very-deep-submicron CMOS technology
A novel approach to formulating unified charge and drain current models for MOSFETs is presented. The charge modeling methodology is based on three regional surface-potential solutions, which describes three operating regions in MOSFETs. The modeling approach is extended to all regions with an expl...
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| Format: | Thesis |
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2008
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| Online Access: | https://hdl.handle.net/10356/3534 |