0.18 um DRAM product electrical failure analysis for prediction of physical defects

Predict possible types of physical defects from electrical failure analysis using the Micromate tester on 0.18 nm technology chips. The results are still applicable to other types of Dynamic Random Access Memory (DRAM).

Bibliographic Details
Main Author: Tej Bahadur Megh Raj.
Other Authors: Krishnamachar Prasad
Format: Thesis
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/3543
_version_ 1811691543738712064
author Tej Bahadur Megh Raj.
author2 Krishnamachar Prasad
author_facet Krishnamachar Prasad
Tej Bahadur Megh Raj.
author_sort Tej Bahadur Megh Raj.
collection NTU
description Predict possible types of physical defects from electrical failure analysis using the Micromate tester on 0.18 nm technology chips. The results are still applicable to other types of Dynamic Random Access Memory (DRAM).
first_indexed 2024-10-01T06:21:34Z
format Thesis
id ntu-10356/3543
institution Nanyang Technological University
last_indexed 2024-10-01T06:21:34Z
publishDate 2008
record_format dspace
spelling ntu-10356/35432023-07-04T15:51:31Z 0.18 um DRAM product electrical failure analysis for prediction of physical defects Tej Bahadur Megh Raj. Krishnamachar Prasad School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Power electronics Predict possible types of physical defects from electrical failure analysis using the Micromate tester on 0.18 nm technology chips. The results are still applicable to other types of Dynamic Random Access Memory (DRAM). Master of Science (Microelectronics) 2008-09-17T09:31:59Z 2008-09-17T09:31:59Z 2004 2004 Thesis http://hdl.handle.net/10356/3543 Nanyang Technological University 131 p. application/pdf
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Power electronics
Tej Bahadur Megh Raj.
0.18 um DRAM product electrical failure analysis for prediction of physical defects
title 0.18 um DRAM product electrical failure analysis for prediction of physical defects
title_full 0.18 um DRAM product electrical failure analysis for prediction of physical defects
title_fullStr 0.18 um DRAM product electrical failure analysis for prediction of physical defects
title_full_unstemmed 0.18 um DRAM product electrical failure analysis for prediction of physical defects
title_short 0.18 um DRAM product electrical failure analysis for prediction of physical defects
title_sort 0 18 um dram product electrical failure analysis for prediction of physical defects
topic DRNTU::Engineering::Electrical and electronic engineering::Power electronics
url http://hdl.handle.net/10356/3543
work_keys_str_mv AT tejbahadurmeghraj 018umdramproductelectricalfailureanalysisforpredictionofphysicaldefects