Etching characteristics of InxGa1-xAs and InP by inductively coupled plasma etching (ICP) technique
This thesis presents the Inductively Coupled Plasma (ICP) Etching Characteristics of InxGal-,As and InP grown by metal organic-chemical vapor deposition (MOCVD). The ICP source produces high-density plasma with ion energy and ion flux operated separately for better uniform etching on large diamet...
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| Format: | Praca dyplomowa |
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2008
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| Dostęp online: | http://hdl.handle.net/10356/3631 |