Etching characteristics of InxGa1-xAs and InP by inductively coupled plasma etching (ICP) technique

Etching characteristics of InxGa1-xAs and InP by inductively coupled plasma etching (ICP) technique

This thesis presents the Inductively Coupled Plasma (ICP) Etching Characteristics of InxGal-,As and InP grown by metal organic-chemical vapor deposition (MOCVD). The ICP source produces high-density plasma with ion energy and ion flux operated separately for better uniform etching on large diamet...

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Bibliographic Details
Main Author: Vicknesh Sahmuganathan
Other Authors: Tang, Xiaohong
Format: Thesis
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Online Access:http://hdl.handle.net/10356/3631

Internet

http://hdl.handle.net/10356/3631

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