Improvement on within wafer and wafer-to-wafer uniformity by chemical mechanical polishing (CMP)
CMP plays a very important role to realize multi-level metallization which is dependent on the ability to effectively planarize the dielectric layers, which insulate the multi-level interconnects. Despite this advantage, the process still suffer from large global non-uniformity within a die and acro...
Main Author: | Wu, Hong Ying. |
---|---|
Other Authors: | Zhu, Weiguang |
Format: | Thesis |
Published: |
2008
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/3766 |
Similar Items
-
Control of wafer-scale non-uniformity in chemical-mechanical planarization by face-up polishing
by: Mau, Catherine (Catherine K.)
Published: (2009) -
Significance of process exhaust system on wafer fab operation and its performance improvement
by: Vedachalam Natanasabapathy
Published: (2008) -
Investigation of low temperature wafer bonding using intermediate layer
by: Deng, Shusheng
Published: (2008) -
Measurement and error analysis of Cu film thickness with Ta barrier layer on wafer for CMP application
by: Qu, Zilian, et al.
Published: (2022) -
Designing a mechanism to cleave silicon wafers
by: Figueroa, Victor, 1982-
Published: (2006)