Investigating high-k on thin film
With the introduction of new materials, to overcome challenges in miniaturization, the silicon process technology works towards further scaling intensively. The research seeks to identify a gate dielectric material in replacement for silicon dioxide (SiO2) and to demonstrate reduced leakage current...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2010
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| Online Access: | http://hdl.handle.net/10356/38595 |