De-layering of copper and low-k dielectrics for semiconductor devices failure analysis

This project aims to quantify the rate of copper de-layered during Chemical Mechanical Polishing for semiconductor devices. This is to improve the effectiveness of de-layering copper during failure analysis since copper is prone to smearing, erosion and dishing. The report is generally divided into...

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Bibliographic Details
Main Author: Ng, Mei Zhen.
Other Authors: Gan Chee Lip
Format: Final Year Project (FYP)
Language:English
Published: 2010
Subjects:
Online Access:http://hdl.handle.net/10356/38706