Growth and characterization of metamorphic layer structures for high electron mobility transistors
InP-based high electron mobility transistors (HEMTs) have demonstrated superior high frequency and low noise performance. However, high cost, limited size and brittle nature of InP substrate bring difficulties to low-cost and high-volume production. In order to overcome these drawbacks, it is desira...
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| Format: | Thesis |
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2008
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| Online Access: | http://hdl.handle.net/10356/3913 |