Fabrication and characterization of mesoporous dielectric materials for ULSI interconnect applications
With the miniaturization of semiconductor devices, new dielectric materials with dielectric constant (k) lower than silicon dioxide (k = 4.0) are required to reduce propagation delay, cross talk noise and power dissipation of the interconnect system in ultra-large-scale integrated circuits (ULSI). T...
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| Format: | Thesis |
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2008
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| Online Access: | https://hdl.handle.net/10356/3931 |