Fabrication and characterization of mesoporous dielectric materials for ULSI interconnect applications
With the miniaturization of semiconductor devices, new dielectric materials with dielectric constant (k) lower than silicon dioxide (k = 4.0) are required to reduce propagation delay, cross talk noise and power dissipation of the interconnect system in ultra-large-scale integrated circuits (ULSI). T...
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| Format: | Thesis |
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2008
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| Online Access: | https://hdl.handle.net/10356/3931 |
| _version_ | 1811686427194294272 |
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| author | Yu, Suzhu |
| author2 | Hu Xiao |
| author_facet | Hu Xiao Yu, Suzhu |
| author_sort | Yu, Suzhu |
| collection | NTU |
| description | With the miniaturization of semiconductor devices, new dielectric materials with dielectric constant (k) lower than silicon dioxide (k = 4.0) are required to reduce propagation delay, cross talk noise and power dissipation of the interconnect system in ultra-large-scale integrated circuits (ULSI). This thesis presents the results of fabrication and characterization of mesoporous organosilicate films used as interconnect dielectrics. Two basic methods to establish porous network in the films, namely the sol-gel and sacrificial template approaches, have been used in this work. |
| first_indexed | 2024-10-01T05:00:14Z |
| format | Thesis |
| id | ntu-10356/3931 |
| institution | Nanyang Technological University |
| last_indexed | 2024-10-01T05:00:14Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/39312023-07-04T17:36:55Z Fabrication and characterization of mesoporous dielectric materials for ULSI interconnect applications Yu, Suzhu Hu Xiao Wong Kin Shun, Terence School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials With the miniaturization of semiconductor devices, new dielectric materials with dielectric constant (k) lower than silicon dioxide (k = 4.0) are required to reduce propagation delay, cross talk noise and power dissipation of the interconnect system in ultra-large-scale integrated circuits (ULSI). This thesis presents the results of fabrication and characterization of mesoporous organosilicate films used as interconnect dielectrics. Two basic methods to establish porous network in the films, namely the sol-gel and sacrificial template approaches, have been used in this work. DOCTOR OF PHILOSOPHY (EEE) 2008-09-17T09:40:37Z 2008-09-17T09:40:37Z 2005 2005 Thesis Yu, S. Z. (2005). Fabrication and characterization of mesoporous dielectric materials for ULSI interconnect applications. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/3931 10.32657/10356/3931 Nanyang Technological University application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials Yu, Suzhu Fabrication and characterization of mesoporous dielectric materials for ULSI interconnect applications |
| title | Fabrication and characterization of mesoporous dielectric materials for ULSI interconnect applications |
| title_full | Fabrication and characterization of mesoporous dielectric materials for ULSI interconnect applications |
| title_fullStr | Fabrication and characterization of mesoporous dielectric materials for ULSI interconnect applications |
| title_full_unstemmed | Fabrication and characterization of mesoporous dielectric materials for ULSI interconnect applications |
| title_short | Fabrication and characterization of mesoporous dielectric materials for ULSI interconnect applications |
| title_sort | fabrication and characterization of mesoporous dielectric materials for ulsi interconnect applications |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials |
| url | https://hdl.handle.net/10356/3931 |
| work_keys_str_mv | AT yusuzhu fabricationandcharacterizationofmesoporousdielectricmaterialsforulsiinterconnectapplications |