Fabrication of high brightness light emitting diode
This project was to design and fabricate a high-brightness GaN based light emitting diode (LED) on a <111> silicon substrate using a new light emitting disk structure to enhance the light extraction. The critical breakthrough that enabled fabrication of the first high-brightness blue LED using...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2010
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| Online Access: | http://hdl.handle.net/10356/40292 |