Growth and characterization of III-V semiconductor solar cells.
A new Molecular Beam Epitaxy system that can be pumped down to 10-11torr is set up. The ultra high vacuum environment was achieved through multiple rounds of baking before and after material loading into the source cells. Growth calibration was done for doped and undoped GaAs films, where Si and...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2010
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| Online Access: | http://hdl.handle.net/10356/40384 |