Novel via technology for high current densities
Through-wafer electrical connections are becoming increasingly important for Micro-Electro-Mechanical systems (MEMS). For a MEMS design structure containing electrical components within an enclosed cavity, through-wafer electrical connections would be an ideal solution to supply power to the electri...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Final Year Project (FYP) |
| Language: | English |
| Published: |
2010
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/40603 |
| _version_ | 1826117478623739904 |
|---|---|
| author | Yeo, Justin Ing Le. |
| author2 | Christopher Shearwood |
| author_facet | Christopher Shearwood Yeo, Justin Ing Le. |
| author_sort | Yeo, Justin Ing Le. |
| collection | NTU |
| description | Through-wafer electrical connections are becoming increasingly important for Micro-Electro-Mechanical systems (MEMS). For a MEMS design structure containing electrical components within an enclosed cavity, through-wafer electrical connections would be an ideal solution to supply power to the electrical components. In this report, a novel way of creating a through-wafer electrical connection by creating a through-silicon wafer via and threading a gold wire with a diameter of 25.4µm through followed by soldering to bond pads is investigated.
This report will be discussing about the process parameters used to create through-silicon wafer vias ranging from 25µm to 800µm in diameter by Deep Reactive Ion Etching (DRIE). Also discussed, will be the photolithography process to create the patterns on the silicon wafer required for the DRIE process and the gold deposition process to create the bond pads. |
| first_indexed | 2024-10-01T04:28:15Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/40603 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:28:15Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | ntu-10356/406032023-03-04T18:52:29Z Novel via technology for high current densities Yeo, Justin Ing Le. Christopher Shearwood School of Mechanical and Aerospace Engineering DRNTU::Engineering::Manufacturing::Product engineering Through-wafer electrical connections are becoming increasingly important for Micro-Electro-Mechanical systems (MEMS). For a MEMS design structure containing electrical components within an enclosed cavity, through-wafer electrical connections would be an ideal solution to supply power to the electrical components. In this report, a novel way of creating a through-wafer electrical connection by creating a through-silicon wafer via and threading a gold wire with a diameter of 25.4µm through followed by soldering to bond pads is investigated. This report will be discussing about the process parameters used to create through-silicon wafer vias ranging from 25µm to 800µm in diameter by Deep Reactive Ion Etching (DRIE). Also discussed, will be the photolithography process to create the patterns on the silicon wafer required for the DRIE process and the gold deposition process to create the bond pads. Bachelor of Engineering (Mechanical Engineering) 2010-06-17T01:05:37Z 2010-06-17T01:05:37Z 2010 2010 Final Year Project (FYP) http://hdl.handle.net/10356/40603 en Nanyang Technological University 95 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Manufacturing::Product engineering Yeo, Justin Ing Le. Novel via technology for high current densities |
| title | Novel via technology for high current densities |
| title_full | Novel via technology for high current densities |
| title_fullStr | Novel via technology for high current densities |
| title_full_unstemmed | Novel via technology for high current densities |
| title_short | Novel via technology for high current densities |
| title_sort | novel via technology for high current densities |
| topic | DRNTU::Engineering::Manufacturing::Product engineering |
| url | http://hdl.handle.net/10356/40603 |
| work_keys_str_mv | AT yeojustiningle novelviatechnologyforhighcurrentdensities |