Electrical characterisation of GaN-based metal semiconductor contacts
Gallium nitride (GaN) based Schottky diodes with different contact diameters of 0.8mm, 1.0mm and 1.3mm have been made by physical wafer deposition of (Electron-Beam) metal contacts onto a gallium nitride silicon wafer. The Schottky metal contacts were deposited on a GaN-based High Electron Mobili...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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2010
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| Online Access: | http://hdl.handle.net/10356/40738 |