MOCVD growth of III-V compounds for long wavelength optoelectronic devices

Metal-Organic Chemical Vapour Deposition (MOCVD) growth of InP based III-V semiconductor materials for long-wavelength semiconductor lasers have been studied in detail. With tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) as group V precursors and N2 as carrier gas, high quality InP base...

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Hlavní autor: Zhu, Jingyi
Další autoři: Tang Xiaohong
Médium: Diplomová práce
Vydáno: 2008
Témata:
On-line přístup:https://hdl.handle.net/10356/4075