MOCVD growth of III-V compounds for long wavelength optoelectronic devices
Metal-Organic Chemical Vapour Deposition (MOCVD) growth of InP based III-V semiconductor materials for long-wavelength semiconductor lasers have been studied in detail. With tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) as group V precursors and N2 as carrier gas, high quality InP base...
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| Format: | Thesis |
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2008
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| Online Access: | https://hdl.handle.net/10356/4075 |
| Summary: | Metal-Organic Chemical Vapour Deposition (MOCVD) growth of InP based III-V semiconductor materials for long-wavelength semiconductor lasers have been studied in detail. With tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) as group V precursors and N2 as carrier gas, high quality InP based III-V semiconductor alloys and quantum well (QW) structures have been grown by using MOCVD technology. |
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