MOCVD growth of III-V compounds for long wavelength optoelectronic devices
Metal-Organic Chemical Vapour Deposition (MOCVD) growth of InP based III-V semiconductor materials for long-wavelength semiconductor lasers have been studied in detail. With tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) as group V precursors and N2 as carrier gas, high quality InP base...
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| Format: | Thesis |
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2008
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| Online Access: | https://hdl.handle.net/10356/4075 |
| _version_ | 1826122906383417344 |
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| author | Zhu, Jingyi |
| author2 | Tang Xiaohong |
| author_facet | Tang Xiaohong Zhu, Jingyi |
| author_sort | Zhu, Jingyi |
| collection | NTU |
| description | Metal-Organic Chemical Vapour Deposition (MOCVD) growth of InP based III-V semiconductor materials for long-wavelength semiconductor lasers have been studied in detail. With tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) as group V precursors and N2 as carrier gas, high quality InP based III-V semiconductor alloys and quantum well (QW) structures have been grown by using MOCVD technology. |
| first_indexed | 2024-10-01T05:55:57Z |
| format | Thesis |
| id | ntu-10356/4075 |
| institution | Nanyang Technological University |
| last_indexed | 2024-10-01T05:55:57Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/40752023-07-04T17:37:32Z MOCVD growth of III-V compounds for long wavelength optoelectronic devices Zhu, Jingyi Tang Xiaohong School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics Metal-Organic Chemical Vapour Deposition (MOCVD) growth of InP based III-V semiconductor materials for long-wavelength semiconductor lasers have been studied in detail. With tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) as group V precursors and N2 as carrier gas, high quality InP based III-V semiconductor alloys and quantum well (QW) structures have been grown by using MOCVD technology. MASTER OF ENGINEERING (EEE) 2008-09-17T09:43:51Z 2008-09-17T09:43:51Z 2005 2005 Thesis Zhu, J. (2005). MOCVD growth of III-V compounds for long wavelength optoelectronic devices. Master’s thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/4075 10.32657/10356/4075 Nanyang Technological University application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics Zhu, Jingyi MOCVD growth of III-V compounds for long wavelength optoelectronic devices |
| title | MOCVD growth of III-V compounds for long wavelength optoelectronic devices |
| title_full | MOCVD growth of III-V compounds for long wavelength optoelectronic devices |
| title_fullStr | MOCVD growth of III-V compounds for long wavelength optoelectronic devices |
| title_full_unstemmed | MOCVD growth of III-V compounds for long wavelength optoelectronic devices |
| title_short | MOCVD growth of III-V compounds for long wavelength optoelectronic devices |
| title_sort | mocvd growth of iii v compounds for long wavelength optoelectronic devices |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics |
| url | https://hdl.handle.net/10356/4075 |
| work_keys_str_mv | AT zhujingyi mocvdgrowthofiiivcompoundsforlongwavelengthoptoelectronicdevices |