Studies of electrical and optoelectronic properties of Ge-ion-implanted SiO2 thin films

This thesis presents a systematic investigation on the electrical and optoelectronic properties of SiO2 thin films embedded with Ge nanocrystals (nc-Ge) synthesized by the low-energy ion implantation technique for the applications in non-volatile memories and light-emitting devices. First of all, di...

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Bibliografiska uppgifter
Huvudupphovsman: Yang, Ming
Övriga upphovsmän: Chen Tupei
Materialtyp: Lärdomsprov
Språk:English
Publicerad: 2010
Ämnen:
Länkar:https://hdl.handle.net/10356/40793