Studies of electrical and optoelectronic properties of Ge-ion-implanted SiO2 thin films
This thesis presents a systematic investigation on the electrical and optoelectronic properties of SiO2 thin films embedded with Ge nanocrystals (nc-Ge) synthesized by the low-energy ion implantation technique for the applications in non-volatile memories and light-emitting devices. First of all, di...
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| Materialtyp: | Lärdomsprov |
| Språk: | English |
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2010
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| Länkar: | https://hdl.handle.net/10356/40793 |