Studies of electrical and optoelectronic properties of Ge-ion-implanted SiO2 thin films
This thesis presents a systematic investigation on the electrical and optoelectronic properties of SiO2 thin films embedded with Ge nanocrystals (nc-Ge) synthesized by the low-energy ion implantation technique for the applications in non-volatile memories and light-emitting devices. First of all, di...
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| Other Authors: | |
| Format: | Thesis |
| Language: | English |
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2010
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| Online Access: | https://hdl.handle.net/10356/40793 |
| _version_ | 1826115045685198848 |
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| author | Yang, Ming |
| author2 | Chen Tupei |
| author_facet | Chen Tupei Yang, Ming |
| author_sort | Yang, Ming |
| collection | NTU |
| description | This thesis presents a systematic investigation on the electrical and optoelectronic properties of SiO2 thin films embedded with Ge nanocrystals (nc-Ge) synthesized by the low-energy ion implantation technique for the applications in non-volatile memories and light-emitting devices. First of all, different conduction mechanisms dominating in different oxide field regions are investigated from the current transport behaviors. Besides, the effect of conduction modulation caused by the charging / discharging of nc-Ge is reported. After that, the charge trapping and charge retention behaviors of Ge-ion-implanted SiO2 thin films are studied in details. Furthermore, by taking into account of the nc-Ge distribution as well as the suppressed dielectric constant of nc-Ge, an approach to calculate the capacitances of Ge-ion-implanted SiO2 thin films is presented. Lastly, the visible electroluminescence (EL) from light-emitting devices based on Ge-ion-implanted SiO2 thin film is presented. The enhancement of EL intensity with implant energy and dose is also investigated. |
| first_indexed | 2024-10-01T03:49:07Z |
| format | Thesis |
| id | ntu-10356/40793 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:49:07Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | ntu-10356/407932023-07-04T17:05:24Z Studies of electrical and optoelectronic properties of Ge-ion-implanted SiO2 thin films Yang, Ming Chen Tupei School of Electrical and Electronic Engineering Microelectronics Centre DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics This thesis presents a systematic investigation on the electrical and optoelectronic properties of SiO2 thin films embedded with Ge nanocrystals (nc-Ge) synthesized by the low-energy ion implantation technique for the applications in non-volatile memories and light-emitting devices. First of all, different conduction mechanisms dominating in different oxide field regions are investigated from the current transport behaviors. Besides, the effect of conduction modulation caused by the charging / discharging of nc-Ge is reported. After that, the charge trapping and charge retention behaviors of Ge-ion-implanted SiO2 thin films are studied in details. Furthermore, by taking into account of the nc-Ge distribution as well as the suppressed dielectric constant of nc-Ge, an approach to calculate the capacitances of Ge-ion-implanted SiO2 thin films is presented. Lastly, the visible electroluminescence (EL) from light-emitting devices based on Ge-ion-implanted SiO2 thin film is presented. The enhancement of EL intensity with implant energy and dose is also investigated. DOCTOR OF PHILOSOPHY (EEE) 2010-06-22T02:23:29Z 2010-06-22T02:23:29Z 2010 2010 Thesis Yang, M. (2010). Studies of electrical and optoelectronic properties of Ge-ion-implanted SiO2 thin films. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/40793 10.32657/10356/40793 en 293 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics Yang, Ming Studies of electrical and optoelectronic properties of Ge-ion-implanted SiO2 thin films |
| title | Studies of electrical and optoelectronic properties of Ge-ion-implanted SiO2 thin films |
| title_full | Studies of electrical and optoelectronic properties of Ge-ion-implanted SiO2 thin films |
| title_fullStr | Studies of electrical and optoelectronic properties of Ge-ion-implanted SiO2 thin films |
| title_full_unstemmed | Studies of electrical and optoelectronic properties of Ge-ion-implanted SiO2 thin films |
| title_short | Studies of electrical and optoelectronic properties of Ge-ion-implanted SiO2 thin films |
| title_sort | studies of electrical and optoelectronic properties of ge ion implanted sio2 thin films |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics |
| url | https://hdl.handle.net/10356/40793 |
| work_keys_str_mv | AT yangming studiesofelectricalandoptoelectronicpropertiesofgeionimplantedsio2thinfilms |