Pulsed laser annealing for the formation of ultra-shallow junctions for nano-scale metal-oxide-semiconductor technologies
The continuous scaling of gate dimensions has created a strong need for better ultrashallow junction technology to suppress short channel effect, which is more serious for shorter devices. As ion implantation remains the most popular method for dopant introduction, tremendous effort has been drawn i...
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| Format: | Thesis |
| Language: | English |
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2010
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| Online Access: | https://hdl.handle.net/10356/41418 |