Pulsed laser annealing for the formation of ultra-shallow junctions for nano-scale metal-oxide-semiconductor technologies
The continuous scaling of gate dimensions has created a strong need for better ultrashallow junction technology to suppress short channel effect, which is more serious for shorter devices. As ion implantation remains the most popular method for dopant introduction, tremendous effort has been drawn i...
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| Format: | Abschlussarbeit |
| Sprache: | English |
| Veröffentlicht: |
2010
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| Online Zugang: | https://hdl.handle.net/10356/41418 |
| Zusammenfassung: | The continuous scaling of gate dimensions has created a strong need for better ultrashallow junction technology to suppress short channel effect, which is more serious for shorter devices. As ion implantation remains the most popular method for dopant introduction, tremendous effort has been drawn into the development of post-implantation annealing techniques. Laser annealing (LA) has been shown to be a promising technique in the formation of ultra-shallow junction due to a number of its favorable features. LA has a near-zero thermal budget that is capable of producing a highly activated and abrupt ultra-shallow junction. |
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