Pulsed laser annealing for the formation of ultra-shallow junctions for nano-scale metal-oxide-semiconductor technologies
The continuous scaling of gate dimensions has created a strong need for better ultrashallow junction technology to suppress short channel effect, which is more serious for shorter devices. As ion implantation remains the most popular method for dopant introduction, tremendous effort has been drawn i...
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| Other Authors: | |
| Format: | Thesis |
| Language: | English |
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2010
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| Online Access: | https://hdl.handle.net/10356/41418 |
| _version_ | 1811685710639398912 |
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| author | Ong, Kuang Kian |
| author2 | Lee Pooi See |
| author_facet | Lee Pooi See Ong, Kuang Kian |
| author_sort | Ong, Kuang Kian |
| collection | NTU |
| description | The continuous scaling of gate dimensions has created a strong need for better ultrashallow junction technology to suppress short channel effect, which is more serious for shorter devices. As ion implantation remains the most popular method for dopant introduction, tremendous effort has been drawn into the development of post-implantation annealing techniques. Laser annealing (LA) has been shown to be a promising technique in the formation of ultra-shallow junction due to a number of its favorable features. LA has a near-zero thermal budget that is capable of producing a highly activated and abrupt ultra-shallow junction. |
| first_indexed | 2024-10-01T04:48:51Z |
| format | Thesis |
| id | ntu-10356/41418 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:48:51Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | ntu-10356/414182023-07-04T17:34:52Z Pulsed laser annealing for the formation of ultra-shallow junctions for nano-scale metal-oxide-semiconductor technologies Ong, Kuang Kian Lee Pooi See Pey Kin Leong School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors DRNTU::Engineering::Electrical and electronic engineering::Microelectronics The continuous scaling of gate dimensions has created a strong need for better ultrashallow junction technology to suppress short channel effect, which is more serious for shorter devices. As ion implantation remains the most popular method for dopant introduction, tremendous effort has been drawn into the development of post-implantation annealing techniques. Laser annealing (LA) has been shown to be a promising technique in the formation of ultra-shallow junction due to a number of its favorable features. LA has a near-zero thermal budget that is capable of producing a highly activated and abrupt ultra-shallow junction. DOCTOR OF PHILOSOPHY (EEE) 2010-07-02T08:03:08Z 2010-07-02T08:03:08Z 2008 2008 Thesis Ong, K. K. (2008). Pulsed laser annealing for the formation of ultra-shallow junctions for nano-scale metal-oxide-semiconductor technologies. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/41418 10.32657/10356/41418 en 214 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Ong, Kuang Kian Pulsed laser annealing for the formation of ultra-shallow junctions for nano-scale metal-oxide-semiconductor technologies |
| title | Pulsed laser annealing for the formation of ultra-shallow junctions for nano-scale metal-oxide-semiconductor technologies |
| title_full | Pulsed laser annealing for the formation of ultra-shallow junctions for nano-scale metal-oxide-semiconductor technologies |
| title_fullStr | Pulsed laser annealing for the formation of ultra-shallow junctions for nano-scale metal-oxide-semiconductor technologies |
| title_full_unstemmed | Pulsed laser annealing for the formation of ultra-shallow junctions for nano-scale metal-oxide-semiconductor technologies |
| title_short | Pulsed laser annealing for the formation of ultra-shallow junctions for nano-scale metal-oxide-semiconductor technologies |
| title_sort | pulsed laser annealing for the formation of ultra shallow junctions for nano scale metal oxide semiconductor technologies |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Semiconductors DRNTU::Engineering::Electrical and electronic engineering::Microelectronics |
| url | https://hdl.handle.net/10356/41418 |
| work_keys_str_mv | AT ongkuangkian pulsedlaserannealingfortheformationofultrashallowjunctionsfornanoscalemetaloxidesemiconductortechnologies |