Theoretical model for the I-V characteristics of the flash EEPROM cell
There exists a need to characterize the flash EEPROM memory without building any prototypes to predict the behavior of the flash EEPROM cell to reduce costs. Hence, an accurate simulation for the device current voltage (I-V) and other characteristics is important. With an accurate physical model, th...
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| Format: | Thesis |
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2008
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| Online Access: | http://hdl.handle.net/10356/4155 |