Application of phase shift masking to sub-micron contact level lithography
As device continues to shrink beyond the theoretical limit of the optical exposure tools, other options need to be considered. Resolution Enhancement Techniques (RET), such as Phase Shift Mask (PSM), Optical Proximity Correction (OPC) and / or Off Axis Illumination (OAI) will be required. Various ty...
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| Médium: | Diplomová práce |
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2008
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| On-line přístup: | http://hdl.handle.net/10356/4158 |