Indium phosphide metamorphic heterojunction bipolar transistor technology
Metamorphic heterojunction bipolar transistor (MHBT) technology is attractive as it offers many advantages such as high performance InP-based devices on low cost substrates such as GaAs, improved substrate mechanical strength (less brittle), control over alloy composition, and higher throughput l...
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| 格式: | Research Report |
| 语言: | English |
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2010
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| 在线阅读: | http://hdl.handle.net/10356/41824 |