Study of erbium disilicide and its application in Schottky source/drain silicon nanowire MOSFETs
For ideal scaling, per generation (~3 years), a O.7x reduction in Metal Oxide Semiconductor Field Effect Transistor (MOSFET) dimensions is necessary to produce circuits with increased performance at reduced cost. 2 particular scaling factors to consider are : (1) source/drain (S/D) scaling which lea...
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| Format: | Thesis |
| Language: | English |
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2010
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| Online Access: | https://hdl.handle.net/10356/42236 |