Metal gate for advanced CMOS applications
A potential metal gate candidate must possess good thermal stability to withstand high anneal temperature and it must also have an effective workfunction (EWF) that is near to the silicon band edges. DC sputtered tungsten nitride (W2N) metal gate on high- K dielectrics is investigated for this ap...
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| Format: | Thesis |
| Language: | English |
| Published: |
2010
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| Online Access: | http://hdl.handle.net/10356/42280 |