A study of dilute nitride-antimonide semiconductors for near infrared optoelectronics devices
In this thesis, GaNAsSb-based optoelectronic device structures were grown using a solid-source molecular beam epitaxy (MBE) system in conjunction with a radio frequency (RF) plasma N source and Sb valved-cracker source. To reduce the nitrogen plasma induced defects, an ion deflection plate has been...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Thesis |
| Language: | English |
| Published: |
2010
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/42311 |