Nano-scale characterization of advanced gate stacks using transmission electron microscopy and electron energy loss spectroscopy
This thesis introduces the characterization methodologies which bridge microscopic properties of material change with macroscopic characteristics of a semiconductor device. The objective is to decode the nature of the insulator-to-conductor transition of the gate dielectrics when a leakage path is f...
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| Format: | Thesis |
| Language: | English |
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2010
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| Online Access: | https://hdl.handle.net/10356/42369 |