Nano-scale characterization of advanced gate stacks using transmission electron microscopy and electron energy loss spectroscopy
This thesis introduces the characterization methodologies which bridge microscopic properties of material change with macroscopic characteristics of a semiconductor device. The objective is to decode the nature of the insulator-to-conductor transition of the gate dielectrics when a leakage path is f...
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| Format: | Thesis |
| Language: | English |
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2010
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| Online Access: | https://hdl.handle.net/10356/42369 |
| _version_ | 1826109604244750336 |
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| author | Li, Xiang |
| author2 | Pey Kin Leong |
| author_facet | Pey Kin Leong Li, Xiang |
| author_sort | Li, Xiang |
| collection | NTU |
| description | This thesis introduces the characterization methodologies which bridge microscopic properties of material change with macroscopic characteristics of a semiconductor device. The objective is to decode the nature of the insulator-to-conductor transition of the gate dielectrics when a leakage path is formed, and understand its impact on device performance and reliability. The oxygen deficiency is proposed to be the dominating defect responsible for the progressive degradation of the ultrathin gate oxide. The silicon nano-cluster transforms the percolation path into a stable configuration and pushes the post-breakdown conduction to a higher level. It is shown that the metal atoms in the gate electrode can migrate into the percolated high-κ dielectrics and form a conductive filament, and therefore reduce its post-breakdown reliability margin. In contrast, the percolation path can be partially repaired for fully silicided gate by controlling the oxygen diffusion and/or metal filamentation. Moreover, the interfacial dipoles are identified to be the origin of the negative flatband voltage shift for sub-stoichiometric TiNx gate. |
| first_indexed | 2024-10-01T02:20:58Z |
| format | Thesis |
| id | ntu-10356/42369 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:20:58Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | ntu-10356/423692023-07-04T16:13:40Z Nano-scale characterization of advanced gate stacks using transmission electron microscopy and electron energy loss spectroscopy Li, Xiang Pey Kin Leong School of Electrical and Electronic Engineering Microelectronics Centre DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics This thesis introduces the characterization methodologies which bridge microscopic properties of material change with macroscopic characteristics of a semiconductor device. The objective is to decode the nature of the insulator-to-conductor transition of the gate dielectrics when a leakage path is formed, and understand its impact on device performance and reliability. The oxygen deficiency is proposed to be the dominating defect responsible for the progressive degradation of the ultrathin gate oxide. The silicon nano-cluster transforms the percolation path into a stable configuration and pushes the post-breakdown conduction to a higher level. It is shown that the metal atoms in the gate electrode can migrate into the percolated high-κ dielectrics and form a conductive filament, and therefore reduce its post-breakdown reliability margin. In contrast, the percolation path can be partially repaired for fully silicided gate by controlling the oxygen diffusion and/or metal filamentation. Moreover, the interfacial dipoles are identified to be the origin of the negative flatband voltage shift for sub-stoichiometric TiNx gate. DOCTOR OF PHILOSOPHY (EEE) 2010-11-29T08:16:30Z 2010-11-29T08:16:30Z 2010 2010 Thesis Li, X. (2010). Nano-scale characterization of advanced gate stacks using transmission electron microscopy and electron energy loss spectroscopy. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/42369 10.32657/10356/42369 en 265 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics Li, Xiang Nano-scale characterization of advanced gate stacks using transmission electron microscopy and electron energy loss spectroscopy |
| title | Nano-scale characterization of advanced gate stacks using transmission electron microscopy and electron energy loss spectroscopy |
| title_full | Nano-scale characterization of advanced gate stacks using transmission electron microscopy and electron energy loss spectroscopy |
| title_fullStr | Nano-scale characterization of advanced gate stacks using transmission electron microscopy and electron energy loss spectroscopy |
| title_full_unstemmed | Nano-scale characterization of advanced gate stacks using transmission electron microscopy and electron energy loss spectroscopy |
| title_short | Nano-scale characterization of advanced gate stacks using transmission electron microscopy and electron energy loss spectroscopy |
| title_sort | nano scale characterization of advanced gate stacks using transmission electron microscopy and electron energy loss spectroscopy |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics |
| url | https://hdl.handle.net/10356/42369 |
| work_keys_str_mv | AT lixiang nanoscalecharacterizationofadvancedgatestacksusingtransmissionelectronmicroscopyandelectronenergylossspectroscopy |