Effect of thermal-induced stress on SOI power devices
Silicon-on-insulator (SOI) technology presents one way of fabricating semiconductor devices on an insulating substrate rather than in a semiconductor bulk. It is a promising potential technology for the next generation ULSI because of its many advantages over its bulk silicon substrate counterpart,...
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| Format: | Thesis |
| Language: | English |
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2011
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| Online Access: | https://hdl.handle.net/10356/42905 |