Improvement of contact resistance through barrier metallization optimization
Development of CVD_TI (Ti film deposition using Chemical Vapour Deposition technique) process in place of PVD (Physical Vapour Deposition) process for 0.15 micrometer generation ofr DRAM contact barrier layer process was carried out and success was achieved.
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Thesis |
| Published: |
2008
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/4291 |