Improvement of contact resistance through barrier metallization optimization
Development of CVD_TI (Ti film deposition using Chemical Vapour Deposition technique) process in place of PVD (Physical Vapour Deposition) process for 0.15 micrometer generation ofr DRAM contact barrier layer process was carried out and success was achieved.
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| Other Authors: | |
| Format: | Thesis |
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2008
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| Online Access: | http://hdl.handle.net/10356/4291 |
| _version_ | 1811690861726007296 |
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| author | Goh, Edwin Beng Chye. |
| author2 | Prasad, Krishnamachar |
| author_facet | Prasad, Krishnamachar Goh, Edwin Beng Chye. |
| author_sort | Goh, Edwin Beng Chye. |
| collection | NTU |
| description | Development of CVD_TI (Ti film deposition using Chemical Vapour Deposition technique) process in place of PVD (Physical Vapour Deposition) process for 0.15 micrometer generation ofr DRAM contact barrier layer process was carried out and success was achieved. |
| first_indexed | 2024-10-01T06:10:44Z |
| format | Thesis |
| id | ntu-10356/4291 |
| institution | Nanyang Technological University |
| last_indexed | 2024-10-01T06:10:44Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/42912023-07-04T15:51:08Z Improvement of contact resistance through barrier metallization optimization Goh, Edwin Beng Chye. Prasad, Krishnamachar School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Development of CVD_TI (Ti film deposition using Chemical Vapour Deposition technique) process in place of PVD (Physical Vapour Deposition) process for 0.15 micrometer generation ofr DRAM contact barrier layer process was carried out and success was achieved. Master of Science (Microelectronics) 2008-09-17T09:48:31Z 2008-09-17T09:48:31Z 2003 2003 Thesis http://hdl.handle.net/10356/4291 Nanyang Technological University application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Goh, Edwin Beng Chye. Improvement of contact resistance through barrier metallization optimization |
| title | Improvement of contact resistance through barrier metallization optimization |
| title_full | Improvement of contact resistance through barrier metallization optimization |
| title_fullStr | Improvement of contact resistance through barrier metallization optimization |
| title_full_unstemmed | Improvement of contact resistance through barrier metallization optimization |
| title_short | Improvement of contact resistance through barrier metallization optimization |
| title_sort | improvement of contact resistance through barrier metallization optimization |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics |
| url | http://hdl.handle.net/10356/4291 |
| work_keys_str_mv | AT gohedwinbengchye improvementofcontactresistancethroughbarriermetallizationoptimization |