Electrical characterization and modeling on mechanical strength of copper to copper bonds for three dimensional integrated circuits
Vertically stacking and bonding individual processed wafers with through-Si vias (TSV) to form three dimensional integrated circuits (3DIC) introduces the possibility of reducing signal propagation delay, a reduction in power consumption and heterogeneous device integration. Cu thermocompression bon...
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| Format: | Thesis |
| Language: | English |
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2011
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| Online Access: | https://hdl.handle.net/10356/43639 |