Development and characterization of GaN high electron mobility transistors for low noise applications

Development and characterization of GaN high electron mobility transistors for low noise applications

This thesis presents the fabrication, detailed characterization and analysis of AlGaN/GaN high electron mobility transistors (HEMTs) and metal-insulator-semiconductor HEMTs (MISHEMTs) for microwave low-noise applications. The major contributions of this thesis are given below: (1) Fabrication proces...

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Xehetasun bibliografikoak
Egile nagusia: Liu, Zhihong
Beste egile batzuk: Ng Geok Ing
Formatua: Thesis
Hizkuntza:English
Argitaratua: 2011
Gaiak:
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Sarrera elektronikoa:https://hdl.handle.net/10356/44001

Internet

https://hdl.handle.net/10356/44001

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