Development and characterization of GaN high electron mobility transistors for low noise applications
This thesis presents the fabrication, detailed characterization and analysis of AlGaN/GaN high electron mobility transistors (HEMTs) and metal-insulator-semiconductor HEMTs (MISHEMTs) for microwave low-noise applications. The major contributions of this thesis are given below: (1) Fabrication proces...
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| Format: | Thesis |
| Language: | English |
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2011
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| Online Access: | https://hdl.handle.net/10356/44001 |
| _version_ | 1811687090374574080 |
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| author | Liu, Zhihong |
| author2 | Ng Geok Ing |
| author_facet | Ng Geok Ing Liu, Zhihong |
| author_sort | Liu, Zhihong |
| collection | NTU |
| description | This thesis presents the fabrication, detailed characterization and analysis of AlGaN/GaN high electron mobility transistors (HEMTs) and metal-insulator-semiconductor HEMTs (MISHEMTs) for microwave low-noise applications. The major contributions of this thesis are given below:
(1) Fabrication processes for conventional Schottky-gate GaN HEMTs and MISHEMTs were developed particularly for low-noise applications.
(2) The physical mechanisms of the OFF-state breakdown characteristics were comprehensively studied for GaN HEMTs on Si.
(3) The surface passivation effects on the bias-dependent microwave small signal characteristics and noise characteristics have been comprehensively studied for AlGaN/GaN HEMTs on Si. The effects of SiN surface passivation on the bias-dependent small signal equivalent circuit elements have been investigated in detail.
(4) The temperature dependent noise performance was characterized for GaN HEMT on high-resistivity Si substrate over a wide temperature range from -50 oC to 200 oC. An analytical model for the temperature dependent microwave noise parameters has been proposed for the GaN HEMTs.
(5) A 0.25-um Atomic-Layer-Deposited (ALD) Al2O3/AlGaN/GaN MISHEMT on high-resistivity Si with excellent noise performance was demonstrated. A state-of-the-art minimum noise figure (NFmin) value of 1.0 dB at 10 GHz was achieved for a 0.25 um ALD Al2O3/AlGaN/GaN MISHEMT on Si for the first time. The 2-dimensional-electron-gas (2DEG) density and transport properties in the ALD-Al2O3/AlGaN/GaN MISHEMTs have been studied. |
| first_indexed | 2024-10-01T05:10:47Z |
| format | Thesis |
| id | ntu-10356/44001 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:10:47Z |
| publishDate | 2011 |
| record_format | dspace |
| spelling | ntu-10356/440012023-07-04T16:54:40Z Development and characterization of GaN high electron mobility transistors for low noise applications Liu, Zhihong Ng Geok Ing School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics This thesis presents the fabrication, detailed characterization and analysis of AlGaN/GaN high electron mobility transistors (HEMTs) and metal-insulator-semiconductor HEMTs (MISHEMTs) for microwave low-noise applications. The major contributions of this thesis are given below: (1) Fabrication processes for conventional Schottky-gate GaN HEMTs and MISHEMTs were developed particularly for low-noise applications. (2) The physical mechanisms of the OFF-state breakdown characteristics were comprehensively studied for GaN HEMTs on Si. (3) The surface passivation effects on the bias-dependent microwave small signal characteristics and noise characteristics have been comprehensively studied for AlGaN/GaN HEMTs on Si. The effects of SiN surface passivation on the bias-dependent small signal equivalent circuit elements have been investigated in detail. (4) The temperature dependent noise performance was characterized for GaN HEMT on high-resistivity Si substrate over a wide temperature range from -50 oC to 200 oC. An analytical model for the temperature dependent microwave noise parameters has been proposed for the GaN HEMTs. (5) A 0.25-um Atomic-Layer-Deposited (ALD) Al2O3/AlGaN/GaN MISHEMT on high-resistivity Si with excellent noise performance was demonstrated. A state-of-the-art minimum noise figure (NFmin) value of 1.0 dB at 10 GHz was achieved for a 0.25 um ALD Al2O3/AlGaN/GaN MISHEMT on Si for the first time. The 2-dimensional-electron-gas (2DEG) density and transport properties in the ALD-Al2O3/AlGaN/GaN MISHEMTs have been studied. DOCTOR OF PHILOSOPHY (EEE) 2011-05-18T08:25:37Z 2011-05-18T08:25:37Z 2011 2011 Thesis Liu, Z. (2011). Development and characterization of GaN high electron mobility transistors for low noise applications. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/44001 10.32657/10356/44001 en 263 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Liu, Zhihong Development and characterization of GaN high electron mobility transistors for low noise applications |
| title | Development and characterization of GaN high electron mobility transistors for low noise applications |
| title_full | Development and characterization of GaN high electron mobility transistors for low noise applications |
| title_fullStr | Development and characterization of GaN high electron mobility transistors for low noise applications |
| title_full_unstemmed | Development and characterization of GaN high electron mobility transistors for low noise applications |
| title_short | Development and characterization of GaN high electron mobility transistors for low noise applications |
| title_sort | development and characterization of gan high electron mobility transistors for low noise applications |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics |
| url | https://hdl.handle.net/10356/44001 |
| work_keys_str_mv | AT liuzhihong developmentandcharacterizationofganhighelectronmobilitytransistorsforlownoiseapplications |