Development of silicon carbide thin films for optoelectronic device applications

Development of silicon carbide thin films for optoelectronic device applications

In this project, the electron cyclotron resonance chemical vapour deposition (ECR-CVD) technique has been used to deposit amorphous (a-SiC:H) and microcrystalline (mc-SiC3-I) films for characterisation of their optical, electrical and structural properties using transmittance/reflectance measuremen...

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Bibliographic Details
Main Author: Ji, Rong
Other Authors: Yoon, Soon Fatt
Format: Thesis
Published: 2008
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Online Access:http://hdl.handle.net/10356/4461
Description
Summary:In this project, the electron cyclotron resonance chemical vapour deposition (ECR-CVD) technique has been used to deposit amorphous (a-SiC:H) and microcrystalline (mc-SiC3-I) films for characterisation of their optical, electrical and structural properties using transmittance/reflectance measurements, variable-temperature current-voltage (I-V) characterisation, Raman scattering and Fourier transform IR spectroscopy.

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